ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,325, issued on Dec. 30, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and etching apparatus" was invented by Ryutaro Suda (Miyagi, Japan), Takatoshi Orui (Hillsboro, Ore.), Kae Kumagai (Miyagi, Japan), Maju Tomura (Miyagi, Japan) and Yoshihide Kihara (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A technique increases verticality in etching. An etching method is a method for etching a target film with a plasma processing apparatus including a chamber and a substrate support located in the chamber to support a substrate, the substrate support holding a substrate that includes the target film, the target film including a ...