US Patent Issued to Tokyo Electron on Dec. 30 for "3D isolation of a segmentated 3D nanosheet channel region" (New York Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,983, issued on Dec. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"3D isolation of a segmentated 3D nanosheet channel region" was invented by Mark I. Gardner (Albany, N.Y.) and H. Jim Fulford (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a plurality of first semiconductor channels vertically spaced from one another and a plurality of second semiconductor channels vertically spaced from one another can be provided. The plurality of first semiconductor channels each have a first sidewall in contact with a dielectric structure and the...