US Patent Issued to Tokyo Electron on Dec. 23 for "Methods for wet atomic layer etching of transition metal oxide dielectric materials" (Texas Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,011, issued on Dec. 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for wet atomic layer etching of transition metal oxide dielectric materials" was invented by Kate Abel (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etch...