US Patent Issued to Tokyo Electron on Dec. 23 for "Method for etching of metal" (New York Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,112, issued on Dec. 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for etching of metal" was invented by Sergey Voronin (Albany, N.Y.), Qi Wang (Albany, N.Y.), Christopher Netzband (Albany, N.Y.), Gabriel Gibney (Albany, N.Y.), Sang Cheol Han (Albany, N.Y.), Peter Biolsi (Albany, N.Y.), Arkalgud Sitaram (Albany, N.Y.) and Christophe Vallee (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of etching a metal includes performing at least two cycles of an etch process. A cycle of the etch process includes: performing a surface modification on an exposed surface of a metal layer over a substrate, performing a hydrogen treat...