US Patent Issued to Tokyo Electron on Dec. 2 for "Film formation method and film formation apparatus" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,486,567, issued on Dec. 2, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film formation method and film formation apparatus" was invented by Naoki Takahashi (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film formation method includes: providing a film formation apparatus including a substrate support, a target holder, and a magnet unit; forming a film on a substrate by a magnetron sputtering of a target; and performing a serial communication monitoring to repeatedly acquire information on power from a power supply through serial communication. The magnet unit oscillates in a predetermined direction along the target, and the serial co...