ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,085, issued on Dec. 16, was assigned to Tokyo Electron Ltd. (Tokyo).
"Wet-dry bilayer resist" was invented by Anton J. DeVilliers (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of patterning a substrate includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a dry photoresist layer, deposited by vapor deposition, over a wet photoresist layer deposited by spin-on deposition. A first relief pattern is formed in the wet photoresist layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the wet photoresist la...