US Patent Issued to Tokyo Electron on Dec. 16 for "Etching method, method of removing etching residue, and storage medium" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,091, issued on Dec. 16, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method, method of removing etching residue, and storage medium" was invented by Nobuhiro Takahashi (Nirasaki, Japan), Keiji Tanouchi (Nirasaki, Japan), Shinji Irie (Nirasaki, Japan) and Akitaka Shimizu (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an ...