ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,112, issued on Aug. 5, was assigned to Tokyo Electron Ltd. (Tokyo).
"Method of manufacturing semiconductor device" was invented by Shimpei Yamaguchi (Tokyo), Kiyotaka Imai (Tokyo) and Atsushi Tsuboi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes: forming a first film containing carbon over a silicon nitride film and a first conductive film; forming a first silicon oxide film surrounding the first film over the silicon nitride film and the first conductive film; removing the first film to form, in the first silicon oxide film, a first opening that exposes at least a part of the silicon n...