US Patent Issued to Tokyo Electron on Aug. 5 for "Etching method and etching apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,090, issued on Aug. 5, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method and etching apparatus" was invented by Toshinori Debari (Nirasaki, Japan), Reiko Sasahara (Nirasaki, Japan), Teppei Okumura (Nirasaki, Japan), Woonghyun Jeung (Nirasaki, Japan), Kenshiro Asahi (Nirasaki, Japan), Hiroyuki Abe (Nirasaki, Japan) and Seungmin Kim (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etc...