US Patent Issued to Tokyo Electron on Aug. 26 for "Trap device and semiconductor manufacturing device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,841, issued on Aug. 26, was assigned to Tokyo Electron Ltd. (Tokyo).

"Trap device and semiconductor manufacturing device" was invented by Yuichi Furuya (Yamanashi, Japan) and Hiroki Sakabe (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trap device including an exhaust gas introduction pipe configured to allow an exhaust gas to flow and be led out from an outlet; a fin member provided in a position where the fin member faces the outlet and is hit by the exhaust gas led out from the outlet; an exhaust path forming member covering at least a portion of the exhaust gas introduction pipe and including an exhaust path configured to exh...