US Patent Issued to Tokyo Electron on Aug. 26 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,870, issued on Aug. 26, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Hiroki Murakami (Nirasaki, Japan) and Shuichiro Sakai (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of etching an etching target film formed on a substrate includes: preparing the substrate having the etching target film; and etching the etching target film, wherein the etching the etching target film includes repeating, a plurality of times, supplying an etchant gas, and plasma-exciting a reaction gas to expose the substrate to plasma of the reaction gas...