US Patent Issued to Tokyo Electron on Aug. 26 for "Sacrificial capping layer for gate protection" (New York Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,872, issued on Aug. 26, was assigned to Tokyo Electron Ltd. (Tokyo).

"Sacrificial capping layer for gate protection" was invented by Yun Han (Albany, N.Y.), David L O'Meara (Albany, N.Y.), Cheryl Alix (Albany, N.Y.), Andrew Metz (Albany, N.Y.), Shan Hu (Albany, N.Y.) and Henan Zhang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate including metal gate stacks and source/drain contact regions in alternating arrangement along a surface of the substrate with a dielectric spacer separating each source/drain contact region from adjacent metal gate stacks. Each source/drain region is recessed within an op...