ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,632, issued on Aug. 19, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing method and plasma processing system" was invented by Atsuki Hashimoto (Miyagi, Japan), Sho Saitoh (Miyagi, Japan) and Yoshimitsu Kon (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method executed by a plasma processing apparatus with a chamber is provided. The method includes (a) providing in the chamber a substrate that includes an etching film and a mask film, the substrate including a first region where the etching film is exposed and a second region where the mask film is exposed, (b) supplying into the chamber a processing ...