ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,939, issued on Aug. 12, was assigned to Tokyo Electron Ltd. (Tokyo).
"Substrate processing method" was invented by Kouzou Tachibana (Koshi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes: a first etching step of performing a first etching by supplying an etching liquid on a front surface of a substrate while rotating the substrate, wherein the first etching is performed under a condition in which a second etching amount of an etching target film in a second region on a peripheral edge of the front surface, is greater than a first etching amount of the etching target film in a first region on a center side...