US Patent Issued to Tokyo Electron on Aug. 12 for "Selective film formation using self-assembled monolayer" (Japanese, South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,926, issued on Aug. 12, was assigned to Tokyo Electron Ltd. (Tokyo).

"Selective film formation using self-assembled monolayer" was invented by Zeyuan Ni (Yamanashi, Japan), Yumiko Kawano (Yamanashi, Japan), Shuji Azumo (Yamanashi, Japan), Taiki Kato (Yamanashi, Japan) and Shinichi Ike (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supp...