ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,908, issued on Aug. 12, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma treatment apparatus" was invented by Tatsuo Matsudo (Nirasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a plasma processing apparatus comprising: a chamber; a gas supply configured to supply gas into the chamber; a substrate support provided in the chamber; a ground electrode electrically grounded and provided in the chamber; an upper electrode provided above the substrate support and the ground electrode; a first high-frequency power supply electrically connected to the upper electrode to generate a plasma from the gas in the chamber; a second...