US Patent Issued to Tokyo Electron on Aug. 12 for "Plasma processing method and plasma processing system" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,936, issued on Aug. 12, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing system" was invented by Kae Takahashi (Miyagi, Japan), Maju Tomura (Miyagi, Japan) and Yoshihide Kihara (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method includes: (a) providing a substrate having an etching target film including a silicon oxide film and a silicon nitride film, and a mask film defining an opening over the etching target film, on a substrate support in a chamber of a plasma processing apparatus; (b) generating a first plasma from a first processing gas including HF gas, CxFy gas (...