US Patent Issued to Tokyo Electron on Aug. 12 for "Plasma processing apparatus and substrate processing method" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,907, issued on Aug. 12, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and substrate processing method" was invented by Chishio Koshimizu (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus comprises a chamber, a substrate support, a plasma generator, a bias power supply and a chuck power supply. The substrate support includes a base and a dielectric part. The base includes a base member and an electrode. The base member is made of a dielectric or an insulator. The electrode is formed on an upper surface of the base member. The electrode forms an upper surface of the base. The dielec...