ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,919, issued on Aug. 12, was assigned to Tokyo Electron Ltd. (Tokyo).
"ALD process with plasma treatment" was invented by Jianping Zhao (Austin, Texas), Toshihiko Iwao (Austin, Texas) and Peter Lowell George Ventzek (Austin, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: in a plasma processing chamber, performing an atomic layer deposition (ALD) process including cycles of deposition while maintaining a temperature of a substrate support between 25deg C. and 450deg C., one of the cycles including exposing the substrate loaded in a plasma processing chamber to a first precursor to modify a surfac...