US Patent Issued to Tokyo Electron on April 29 for "Method of forming a FET structure by selective deposition of film on source/drain contact" (New York, Texas Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,692, issued on April 29, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of forming a FET structure by selective deposition of film on source/drain contact" was invented by Yun Han (Albany, N.Y.), Alok Ranjan (Austin, Texas), Peter Ventzek (Austin, Texas), Andrew Metz (Albany, N.Y.) and Hiroaki Niimi (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a FET semiconductor structure includes providing a substrate comprising at least one source/drain contact of at least one FET, the at least one source/drain contact formed adjacent to a dummy gate of the at least one FET. A TiSi2 film with C54 structure is select...