ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,389, issued on April 22, was assigned to Tokyo Electron Ltd. (Tokyo).
"Substrate processing method and substrate processing apparatus" was invented by Kohei Fukushima (Iwate, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined p...