ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,465, issued on April 22, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Eiki Kamata (Yamanashi, Japan), Taro Ikeda (Yamanashi, Japan), Satoru Kawakami (Yamanashi, Japan) and Takumi Kabe (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielect...