US Patent Issued to Tokyo Electron on April 22 for "Dual metal wrap-around contacts for semiconductor devices" (New York Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,820, issued on April 22, was assigned to Tokyo Electron Ltd. (Tokyo).

"Dual metal wrap-around contacts for semiconductor devices" was invented by Hiroaki Niimi (Albany, N.Y.), Kandabara N Tapily (Albany, N.Y.) and Takahiro Hakamata (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first raised feature in a NFET region on a substrate, a first n-type doped epitaxial semiconductor material grown on the first raised feature, the first n-type doped epitaxial material having a first upward facing surface and a first downward facing surface, a first contact metal on the first downward facing surface, and a second...