US Patent Issued to Tokyo Electron, UNIVERSITE D'ORLEANS on March 11 for "Etching method and etching apparatus" (French, Japanese, American Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,515, issued on March 11, was assigned to Tokyo Electron Ltd. (Tokyo) and UNIVERSITE D'ORLEANS (Orleans, France).

"Etching method and etching apparatus" was invented by Shigeru Tahara (Miyagi, Japan), Jacques Faguet (Austin, Texas), Kaoru Maekawa (Albany, N.Y.), Kumiko Ono (Tokyo), Nagisa Sato (Tokyo), Remi Dussart (Saint-Pryve Saint-Mesmin, France), Thomas Tillocher (Orleans, France), Philippe Lefaucheux (Mareau-aux-pres, France) and Gaelle Antoun (Dardilly, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to...