US Patent Issued to Tokyo Electron, Tohoku University on Dec. 2 for "Plasma processing apparatus and plasma processing method" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,964, issued on Dec. 2, was assigned to Tokyo Electron Ltd. (Tokyo) and Tohoku University (Miyagi, Japan).

"Plasma processing apparatus and plasma processing method" was invented by Masaki Hirayama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example of an embodiment, a plasma processing apparatus includes a processing container, a stage, an upper electrode, an inlet, and a waveguide device. The stage is provided within the processing container. The upper electrode is provided above the stage, to interpose a space within the processing container. The inlet is configured to introduce high-frequency waves. The high-frequency waves are VHF...