ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,038, issued on Oct. 7, was assigned to Tokyo Electron Ltd. (Tokyo) and IMEC VZW (Leuven, Belgium).
"Forming vias in a semiconductor device" was invented by Kaushik Kumar (Hoegaarden, Belgium), Yannick Feurprier (Brussels) and Zsolt Tokei (Leuven, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "In certain embodiments, a method includes forming a first etch stop layer on a first metallization layer of a semiconductor substrate. The method further includes forming, prior to forming a second metallization layer over the first metallization layer, an opening in the first etch stop layer according to a supervia mask. The method further includes form...