ALEXANDRIA, Va., March 12 -- United States Patent no. 12,247,298, issued on March 11, was assigned to TOKUYAMA Corp. (Yamaguchi, Japan).
"Semiconductor wafer treatment liquid and production method thereof" was invented by Tomoaki Sato (Yamaguchi, Japan), Yuki Kikkawa (Yamaguchi, Japan), Takafumi Shimoda (Yamaguchi, Japan) and Takayuki Negishi (Yamaguchi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L...