US Patent Issued to TOKUYAMA on April 29 for "Etching solution, method for treating substrate with the etching solution, and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,693, issued on April 29, was assigned to TOKUYAMA Corp. (Yamaguchi, Japan).

"Etching solution, method for treating substrate with the etching solution, and method for manufacturing semiconductor device" was invented by Manami Oshio (Yamaguchi, Japan) and Naoto Nomura (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Silicon carbonitride with excellent dielectric and/or other properties may be used in manufacturing semiconductor devices. The manufacturing often requires etching silicon carbonitride without etching silicon oxide, but there is no known etching solution that sufficiently selectively etches silicon carbonitride containing c...