US Patent Issued to Tokuyama on April 15 for "Silicon core wire for depositing polycrystalline silicon and production method therefor" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,275,642, issued on April 15, was assigned to Tokuyama Corp. (Yamaguchi, Japan).

"Silicon core wire for depositing polycrystalline silicon and production method therefor" was invented by Junya Sakai (Yamaguchi, Japan), Seiji Katou (Yamaguchi, Japan), Makoto Kamada (Yamaguchi, Japan) and Miki Emoto (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon core wire for depositing polycrystalline silicon is formed in a gate shape and includes a pair of vertical rod portions and a horizontal portion laterally connecting upper ends of the vertical rod portions, in which ends of the vertical rod portions and the horizontal portion are joined b...