US Patent Issued to TOKAI CARBON on July 22 for "Polycrystalline SiC compact and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,026, issued on July 22, was assigned to TOKAI CARBON Co. LTD. (Minato-ku, Japan).

"Polycrystalline SiC compact and method for manufacturing the same" was invented by Yohei Harada (Tokyo) and Junya Oishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 micro metre or less, Wa (10 to 20 mm) is 0.13 micro metre or less, and Wa (20 to 30 mm) is 0.20 micro metre or less."

The patent was filed on Sept. 26, 2022...