US Patent Issued to TOHOKU UNIVERSITY on Aug. 26 for "Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,537, issued on Aug. 26, was assigned to TOHOKU UNIVERSITY (Miyagi., Japan).

"Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element" was invented by Koichi Nishioka (Sendai, Japan), Tetsuo Endoh (Sendai, Japan), Shoji Ikeda (Sendai, Japan), Hideo Sato (Sendai, Japan) and Hiroaki Honjo (Sendai, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistance effect element includes a first reference layer, a first junction layer, a first divided recording layer, a second junction layer, a second divided recording layer, and a third junction layer. The first divided recording laye...