US Patent Issued to TOHOKU UNIVERSITY on Aug. 26 for "Magnetic film, magnetoresistance effect element and magnetic memory" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,326, issued on Aug. 26, was assigned to TOHOKU UNIVERSITY (Miyagi, Japan).

"Magnetic film, magnetoresistance effect element and magnetic memory" was invented by Yoshiaki Saito (Miyagi, Japan), Shoji Ikeda (Miyagi, Japan) and Tetsuo Endoh (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a magnetic film, a magnetoresistance effect element and a magnetic memory which take advantages of atop-pinned structure and a bottom-pinned structure, maintain perpendicular magnetic anisotropy of magnetic layers in a fixing layer and allow strong pinning even in an annealing treatment after a protective film is formed.A fixing layer of a ma...