ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,329, issued on June 17, was assigned to TIANJIN SANAN OPTOELECTRONICS Co. LTD. (Tianjin, China).
"Infrared light-emitting diode" was invented by Chunfu Tsai (Tianjin, China) and Chihhung Hsiao (Tianjin, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An infrared light-emitting diode (LED) includes a semiconductor light-emitting unit which includes an active layer, a first waveguide layer, a second waveguide layer, a first cladding layer and a second cladding layer. The active layer includes at least one pair of layers. Each pair of layers includes a well layer and a barrier layer. The first and the second waveguide layers are respectively dispo...