US Patent Issued to TIANJIN SANAN OPTOELECTRONICS on Dec. 16 for "Light-emitting device and production method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,748, issued on Dec. 16, was assigned to TIANJIN SANAN OPTOELECTRONICS Co. LTD. (Tianjin, China).

"Light-emitting device and production method thereof" was invented by Chihhung Hsiao (Tianjin, China), Kunhuang Cai (Tianjin, China), Duxiang Wang (Tianjin, China) and Chia-Hung Chang (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting device includes a light-emitting laminating structure having an ohmic contact layer, a transition layer, a current-spreading layer, a first type semiconductor layer, an active layer, and a second type semiconductor layer. The current-spreading layer has aluminum, and, in the current-spreading lay...