ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,680, issued on May 13, was assigned to THE TRUSTEES OF PRINCETON UNIVERSITY (Princeton, N.J.).

"Donor-acceptor interfaces for excitonic semiconductors" was invented by Barry P. Rand (Princeton, N.J.) and Lianfeng Zhao (Jersey City, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a thin film semiconductor device that exploits excitonic characteristics of various organic semiconductor materials. The device may include an anode (120), a cathode (170), and a donor-acceptor heterojunction (150) disposed between the anode and the cathode. The donor-acceptor heterojunction may further include an acceptor material (404) having a highest occu...