ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,858, issued on Nov. 4, was assigned to The Royal Institution for the Advacement of Learning/Mcgill University (Montreal).

"High efficiency visible and ultraviolet nanowire emitters" was invented by Zetian Mi (Verdun, Canada), Songrui Zhao (Montreal) and Renjie Wang (Montreal).

According to the abstract* released by the U.S. Patent & Trademark Office: "GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell co...