US Patent Issued to THE RITSUMEIKAN TRUST on July 15 for "Near-infrared light emitting semiconductor element and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,058, issued on July 15, was assigned to THE RITSUMEIKAN TRUST (Kyoto, Japan).

"Near-infrared light emitting semiconductor element and method for manufacturing same" was invented by Shuhei Ichikawa (Suita, Japan), Naoki Yoshioka (Suita, Japan), Yasufumi Fujiwara (Suita, Japan) and Jun Tatebayashi (Suita, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are: a near infrared light-emitting semiconductor element that does not contain any harmful elements and that makes it possible to obtain near infrared light of a stable wavelength in a narrow band regardless of the operating environment; and a method for producing the near infrared light-...