US Patent Issued to The Regents of the University of California on Feb. 18 for "III-N based material structures, methods, devices and circuit modules based on strain management" (American, Japanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,678, issued on Feb. 18, was assigned to The Regents of the University of California (Oakland, Calif.).

"III-N based material structures, methods, devices and circuit modules based on strain management" was invented by Umesh K. Mishra (Montecito, Calif.), Stacia Keller (Santa Barbara, Calif.), Elaheh Ahmadi (Hyattsville, Md.), Chirag Gupta (Goleta, Calif.) and Yusuke Tsukada (Ibaraki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure describes the use of strain to enhance the properties of p- and n-materials so as to improve the performance of III-N electronic and optoelectronic devices. In one example, transistor devices include a ...