US Patent Issued to The Institute of Optics and Electronics, The Chinese Academy of Sciences on April 8 for "Ultra-large area scanning reactive ion etching machine and etching method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,530, issued on April 8, was assigned to The Institute of Optics and Electronics, The Chinese Academy of Sciences (Sichuan, China).

"Ultra-large area scanning reactive ion etching machine and etching method thereof" was invented by Xiangang Luo (Chengdu, China), Zeyu Zhao (Chengdu, China), Yanqin Wang (Chengdu, China), Ping Gao (Chengdu, China), Xiaoliang Ma (Chengdu, China), Mingbo Pu (Chengdu, China), Xiong Li (Chengdu, China) and Yinghui Guo (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etc...