US Patent Issued to The Government of the United States of America, as represented by the Secretary of the Navy on Dec. 30 for "Beta-Ga 2 O 3 junction barrier Schottky (JBS) diodes with sputtered p-type NiO" (Virginia, Maryland Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,922, issued on Dec. 30, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlington, Va.).

"Beta-Ga 2 O 3 junction barrier Schottky (JBS) diodes with sputtered p-type NiO" was invented by Joseph A. Spencer (Springfield, Va.), Marko J. Tadjer (Vienna, Va.), Alan G. Jacobs (Rockville, Md.), Karl D. Hobart (Alexandria, Va.) and Yuhao Zhang (Blacksburg, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches...