US Patent Issued to THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP on Aug. 12 for "Semiconductor phosphide injection synthesis system and control method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,383,879, issued on Aug. 12, was assigned to THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP Corp. (Shijiazhuang, China).

"Semiconductor phosphide injection synthesis system and control method" was invented by Niefeng Sun (Hebei, China), Shujie Wang (Hebei, China), Huisheng Liu (Hebei, China) and Tongnian Sun (Hebei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box ...