ALEXANDRIA, Va., June 9 -- United States Patent no. 12,285,819, issued on April 29, was assigned to THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP Corp. (Shijiazhuang, China).
"Method for cutting substrate wafer from indium phosphide crystal bar" was invented by Yanlei Shi (Hebei, China), Niefeng Sun (Hebei, China), Shujie Wang (Hebei, China), Hongfei Zhao (Hebei, China), Yaqi Li (Hebei, China), Lijie Fu (Hebei, China), Yang Wang (Hebei, China), Xiaolan Li (Hebei, China), Huimin Shao (Hebei, China), Huisheng Liu (Hebei, China) and Jian Jiang (Hebei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The invention discloses a method for cutting a substrate wafer from an indium phosphide c...