ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,957, issued on Sept. 30, was assigned to THALES (Courbevoie, France).
"HEMT transistor with gate extension" was invented by Jean-Claude Jacquet (Palaiseau, France), Philippe Altuntas (Palaiseau, France), Sylvain Delage (Palaiseau, France) and Stephane Piotrowicz (Palaiseau, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high-mobility field-effect transistor, includes a stack along a Z axis, deposited on a substrate and comprising a buffer layer, a barrier layer, a heterojunction between the buffer layer and the barrier layer, and a two-dimensional electron gas localized in an XY plane perpendicular to the axis Z and in the vicinity of the ...