US Patent Issued to TEXAS INSTRUMENTS on Sept. 30 for "System for determining leakage current of a field effect transistor over temperature" (Texas, New Hampshire Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,429,515, issued on Sept. 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"System for determining leakage current of a field effect transistor over temperature" was invented by Robert Allan Neidorff (Bedford, N.H.) and Henry Litzmann Edwards (Garland, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system for determining the leakage current of a field effect transistor over temperature includes a metal oxide semiconductor field effect transistor (MOSFET) having first and second current terminals and a control terminal, wherein the first current terminal is coupled to a current measurement device. A switch is coupled to the control terminal a...