US Patent Issued to Texas Instruments on Sept. 23 for "Fin field-effect transistor semiconductor device and method of forming the same" (Texas Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,443, issued on Sept. 23, was assigned to Texas Instruments Inc. (Dallas).

"Fin field-effect transistor semiconductor device and method of forming the same" was invented by Bhaskar Srinivasan (Allen, Texas), Walter Scott Idol (Plano, Texas), Ming-Yeh Chuang (McKinney, Texas) and Brian Goodlin (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin field-effect transistor ("FinFET") semiconductor device and method of forming the same. In one example, a semiconductor fin is formed over a semiconductor substrate. A conformal dielectric layer is formed on a top and side surfaces of the fin. A doped semiconductor layer is formed over the confo...