US Patent Issued to TEXAS INSTRUMENTS on Sept. 2 for "Dielectric silicon nitride barrier deposition process for improved metal leakage and adhesion" (Texas Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,880, issued on Sept. 2, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Dielectric silicon nitride barrier deposition process for improved metal leakage and adhesion" was invented by Qi-Zhong Hong (Richardson, Texas), Joseph Jian Song (Plano, Texas), Gregory Boyd Shinn (Dallas) and Bhaskar Srinivasan (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes a semiconductor die having a multilevel metallization structure including stacked levels with respective dielectric layers and metal lines, and a low leakage, low hydrogen diffusion barrier layer on one of the stacked levels. The diffusion barrier layer contacts...