ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,352, issued on Sept. 2, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Advanced poly resistor and CMOS transistor" was invented by Mahalingam Nandakumar (Richardson, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an integrated circuit includes first forming a resistor body and a transistor gate from a semiconductor layer over a substrate. Second, sidewall spacers are formed adjacent the resistor body and the transistor gate. Third, a silicide blocking structure is formed over at least a portion of the resistor body. And fourth, the resistor body and the transistor gate are concurrently millisecond annealed."
The patent ...