US Patent Issued to TEXAS INSTRUMENTS on Sept. 16 for "Technique for GaN epitaxy on insulating substrates" (Texas Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,914, issued on Sept. 16, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Technique for GaN epitaxy on insulating substrates" was invented by Nicholas S. Dellas (Dallas) and Scott Robert Summerfelt (Garland, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a first epitaxial layer of an aluminum gallium nitride (AlGaN) material onto a preliminary substrate and polishing the first layer's surface. Ions are implanted beneath the surface, which is bonded to a seed insulating substrate. Annealing is performed, resulting in second epitaxial layer on preliminary substrate and third epitaxial layer on seed insulating subst...