US Patent Issued to Texas Instruments on Oct. 21 for "Channel stop and well dopant migration control implant for reduced MOS threshold voltage mismatch" (Texas Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,111, issued on Oct. 21, was assigned to Texas Instruments Inc. (Dallas).

"Channel stop and well dopant migration control implant for reduced MOS threshold voltage mismatch" was invented by Mahalingam Nandakumar (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A channel stop and well dopant migration control implant (e.g., of argon) can be used in the fabrication of a transistor (e.g., PMOS), either around the time of threshold voltage adjust and well implants prior to gate formation, or as a through-gate implant around the time of source/drain extension implants. With its implant depth targeted about at or less than the peak of the ...