US Patent Issued to TEXAS INSTRUMENTS on Oct. 14 for "Gallium nitride device having a combination of surface passivation layers" (Texas Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,600, issued on Oct. 14, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Gallium nitride device having a combination of surface passivation layers" was invented by Dong Seup Lee (McKinney, Texas), Jungwoo Joh (Allen, Texas) and Yoshikazu Kondo (Sachse, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes providing a GaN substrate with an epitaxial layer formed thereover, the epitaxial layer forming a heterojunction with the GaN substrate, the heterojunction supporting a 2-dimensional electron gas (2DEG) channel in the GaN substrate. A composite surface passivation layer is formed over a top su...